dm th3004lk3 q document number: ds 38461 rev. 1 - 2 1 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q 30v 175c n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c 3 0v 4m ? @ v gs = 10 v 75 a 7m ? @ v gs = 4 .5 v 75 a description and applications this mosfet is designed to mee t the stringent requirements of a utomotive applications. it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? power m anagement f unctions ? dc - dc converters ? bldc motor control ? reverse polarity protection features ? rated to + 175 c C ideal for high ambient t emperature e nvironments ? high conversion efficiency ? low r ds(on) C minimizes on - state losses ? low input capacitance ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: to 252 (dpak) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: matte tin finish. solderable per mil - std - 202, method 208 ? w eight: 0. 3 15 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h300 4l k3 q - 13 to252 (dpak) 2 , 5 00 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900 ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. a utomotive products are aec - q101 qualified and are ppap capable. r efer to http://www.diodes.com/product_compliance_definitions .html . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information equivalent circuit pin out top view =manufacturer s marking h3004l = product type marking code yyww = date code marking yy = last two digits of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) top view yyww h3004l green
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 2 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss +20 - 16 v continuous drain current v gs = 10 v steady state (note 7 ) t c = +25c t c = + 10 0c i d 75 75 a steady state (note 6 ) t a = +25c t a = + 10 0c i d 21 1 5 a pulsed drain curren t ( 1 0 dm 1 05 a maximum continuous body diode f orward current i s 75 a avalanche current l= 5 mh i as 10.7 a avalanche energy l= 5 mh e as 287 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 7 ) p d 107 w thermal resistance, junction to ambient (note 6 ) r ja 50 c/w thermal resistance, junction to case (note 7 ) r j c 1.4 c/w operating and storage temperature range t j, t stg - 55 to +1 7 5 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 v v gs = 0v, i d = 1m a zero gate voltage drain current i dss 1 a v ds = 24 v, v gs = 0v zero gate voltage drain current (note 9) i dss 10 a v ds = 24 v, v gs = 0v t a = +125c gate - source leakage i gss 100 n a v gs = + 20 v, v ds = 0v v gs = - 16 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 1 1.7 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) 3.3 4 m ? v gs = 10 v, i d = 20 a 5.5 7 v gs = 4 .5v, i d = 7 a diode forward voltage v sd 0.75 1 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss 2 , 370 pf v ds = 15 v, v gs = 0v , f = 1 mhz output capacitance c oss 1 , 360 pf reverse transfer capacitance c rss 240 pf gate r esistance r g 0.15 0.6 1.5 ? v ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g 20 nc v ds = 1 5 v, i d = 20 a total gate charge ( v gs = 10 v ) q g 44 nc gate - source charge q gs 7 nc gate - drain charge q gd 8 nc turn - on delay time t d( on ) 6.2 ns v dd = 15 v, v gs = 10 v, r l = 0.75 ? , r g = 3 ? , i d = 20 a turn - on rise time t r 4.3 ns turn - off delay time t d( off ) 21 ns turn - off fall time t f 8 ns reverse recovery time t rr 25 ns i f = 15 a , d i /d t= 5 00a/ s reverse recovery charge q rr 37 n c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . thermal resistance from junction to soldering point (on the exposed drain pad) 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 3 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q 0 5 10 15 20 25 30 0 0.5 1 1.5 2 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4v gs v = 2.8v gs v = 2.2v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0.002 0.003 0.004 0.005 0.006 0.007 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 12 14 16 i = 20a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0.002 0.003 0.004 0.005 0.006 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs t = 175c a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 15a d v = 10v gs i = 20a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 4 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 15a d v = 10v gs i = 20a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 10 100 1000 10000 0 5 10 15 20 25 30 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 v = 15v ds i = 20a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.1 1 10 100 1000 0.1 1 10 100 p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w p = 1s w r ds(on) limited t = 175c j (m ax ) t = 25c c v = 10v gs single pulse dut on infinite heatsink i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 5 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r (t) = r(t) * r ? ? jc jc r = 1.4c/w ? jc duty cycle, d = t1/ t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 6 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm th3004lk3 q document number: ds 38461 rev. 1 - 2 7 of 7 www.diodes.com march 2016 ? diodes incorporated dm th3004lk3 q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes inc orporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or s ystems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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